Description The EL817 series of devices each consist of an infrared emitting diodes, optically coupled to a phototransistor detector encapsulated with green compound. The devices are in a 4-pin DIP package and available in wide-lead spacing and SMD option. Features Current transfer ratio (CTR: 50~600% at IF =5mA, VCE =5V) High isolation voltage between input and output (Viso=5000 V rms ) Creepage distance >7.62 mm Operating temperature up to 110°C Compact small outline package Pb free and RoHS compliant. Share this post: on Twitter on Facebook on LinkedIn Related
