Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.6 W Maximum Collector-Base Voltage |Vcb|: 60 V Maximum Collector-Emitter Voltage |Vce|: 60 V Maximum Emitter-Base Voltage |Veb|: 6 V Maximum Collector Current |Ic max|: 0.03 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 80 MHz Collector Capacitance (Cc): 6 pF Forward Current Transfer Ratio (hFE), MIN: 100 Noise Figure, dB: –
