Characteristics of the bipolar transistor 2SA684: Type – p-n-p Collector-Emitter Voltage: -50 V Collector-Base Voltage: -60 V Emitter-Base Voltage: -5 V Collector Current: -1 A Collector Dissipation – 1 W DC Current Gain (hfe) – 85 to 340 Transition Frequency – 200 MHz Operating and Storage Junction Temperature Range -55 to 150 °C
